Перегляд за автором "Roch, T."

Сортувати за: Порядок: Результатів:

  • Electrical and optical parameters of Cu₆PS₅I-based thin films deposited using magnetron sputtering 
    Studenyak, I.P.; Bendak, A.V.; Izai, V.Yu.; Guranich, P.P.; Kúš, P.; Mikula, M.; Grančič, B.; Zahoran, M.; Greguš, J.; Vincze, A.; Roch, T.; Plecenik, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆PS₅I-based thin films were deposited onto silicate glass substrates by nonreactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscopy. ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...